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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms T C = 80 C T C = 25 C tP = 1 ms, T C = 80C VCES IC,nom. IC ICRM 1200 25 50 50 V A A A T C=25C, Transistor Ptot 200 W VGES +/- 20V V IF 25 A IFRM 50 A VR = 0V, tp = 10ms, T Vj = 125C I2t 230 A2s RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 25A, VGE = 15V, Tvj = 25C IC = 25A, VGE = 15V, Tvj = 125C IC = 1mA, VCE = VGE, T vj = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 2,9 6,5 V V V VGE = -15V...+15V QG - 0,26 - C f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 1,65 - nF f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V VCE = 1200V, VGE = 0V, Tvj = 25C VCE = 1200V, VGE = 0V, Tvj = 125C VCE = 0V, VGE = 20V, Tvj = 25C Cres ICES - 0,11 2 200 - 78 400 nF A A nA IGES - prepared by: Mark Munzer approved by: M. Hierholzer date of publication: 09.09.1999 revision: 2 1(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 25A, VCC = 600V VGE = 15V, RG = 33, T vj = 25C VGE = 15V, RG = 33, T vj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 25A, VCC = 600V VGE = 15V, RG = 33, T vj = 25C VGE = 15V, RG = 33, T vj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 25A, VCC = 600V VGE = 15V, RG = 33, T vj = 25C VGE = 15V, RG = 33, T vj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 25A, VCC = 600V VGE = 15V, RG = 33, T vj = 25C VGE = 15V, RG = 33, T vj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip T C=25C IC = 25A, VCC = 600V, VGE = 15V RG = 33, T vj = 125C, LS = 130nH IC = 25A, VCC = 600V, VGE = 15V RG = 33, T vj = 125C, LS = 130nH tP 10sec, VGE 15V, RG = 33 T Vj125C, VCC=900V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 220 60 A nH Eoff 2,9 mWs Eon 3,3 mWs tf 0,03 0,06 s s td,off 0,27 0,32 s s tr 0,05 0,05 s s td,on 0,06 0,07 s s min. typ. max. RCC`+EE` - 8,0 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 25A, VGE = 0V, Tvj = 25C IF = 25A, VGE = 0V, Tvj = 125C IF = 25A, - diF/dt = 650A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 25A, - diF/dt = 650A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 25A, - diF/dt = 650A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C Erec 1 2,2 mWs mWs Qr 2,5 5,4 As As IRM 25 32 A A VF min. - typ. 1,8 1,7 max. 2,3 2,2 V V 2(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m * K / grease = 1 W/m * K RthCK RthJC - typ. 0,02 max. 0,6 1 K/W K/W K/W T vj - - 150 C T op -40 - 125 C T stg -40 - 150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M6 M1 3 AL2O3 225 6 Nm M2 Nm G 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Ausgangskennlinie (typisch) Output characteristic (typical) I = f (VCE) C VGE = 15V 50 45 40 35 Tj = 25C Tj = 125C IC [A] 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 50 45 40 35 VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V I = f (VCE) C Tvj = 125C IC [A] 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 50 45 Tj = 25C 40 35 Tj = 125C IC [A] 30 25 20 15 10 5 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 50 45 Tj = 25C I = f (VF) F 40 35 Tj = 125C IF [A] 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =33 , VCE = 600V, Tj = 125C 9 8 7 6 E [mJ] Eoff Eon Erec 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 IC [A] Schaltverluste (typisch) Switching losses (typical) 16 Eoff Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , IC = 25A , VCE = 600V , Tj = 125C 14 12 10 E [mJ] Eon Erec 8 6 4 2 0 0 30 60 90 120 150 180 210 240 270 300 RG [] 6(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 10 1 ZthJC [K / W] 0,1 Zth:Diode Zth:IGBT 0,01 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 117,12 0,009 59,25 0,003 2 394,24 0,045 436,14 0,022 3 31,28 0,073 387,87 0,064 4 57,36 0,229 116,74 0,344 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 60 VGE = 15V, Rg = 33 Ohm, Tvj= 125C 50 40 IC [A] IC,Modul IC,Chip 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 8(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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